Bourns IGBT, 40 A 600 V TO-247

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Subtotal (1 tube of 600 units)*

SGD2,268.60

(exc. GST)

SGD2,472.60

(inc. GST)

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  • 1,800 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
600 +SGD3.781SGD2,268.60

*price indicative

RS Stock No.:
253-3504
Mfr. Part No.:
BIDW20N60T
Manufacturer:
Bourns
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Brand

Bourns

Product Type

IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

192W

Package Type

TO-247

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Series

BIDW20N60T

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.

600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

Low switching loss

RoHS compliant

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