Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

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SGD4.15

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SGD4.52

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10 - 49SGD4.13
50 - 99SGD3.99
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250 +SGD3.82

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Packaging Options:
RS Stock No.:
796-5055
Mfr. Part No.:
GT20J341
Manufacturer:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

45 W

Package Type

TO-220SIS

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

100kHz

Transistor Configuration

Single

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

IGBT Discretes, Toshiba


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IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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