Infineon IGB10N60TATMA1, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 826-9055
- Mfr. Part No.:
- IGB10N60TATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD29.68
(exc. GST)
SGD32.36
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 600 unit(s) shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD1.484 | SGD29.68 |
| 40 - 80 | SGD1.453 | SGD29.06 |
| 100 - 180 | SGD1.41 | SGD28.20 |
| 200 - 380 | SGD1.368 | SGD27.36 |
| 400 + | SGD1.327 | SGD26.54 |
*price indicative
- RS Stock No.:
- 826-9055
- Mfr. Part No.:
- IGB10N60TATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- Infineon IGB10N60TATMA1 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- STMicroelectronics STGB10NC60HDT4 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- STMicroelectronics STGB10NC60KDT4 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- Fairchild ISL9V5036S3ST IGBT 3-Pin D2PAK (TO-263), Surface Mount
- STMicroelectronics STGB18N40LZT4 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- Fairchild FGB3440G2_F085 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- onsemi HGT1S10N120BNST IGBT 3-Pin D2PAK (TO-263), Surface Mount
- Fairchild FGB3245G2_F085 IGBT 3-Pin D2PAK (TO-263), Surface Mount