Infineon IGBT Module 1200 V

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RS Stock No.:
244-5383
Mfr. Part No.:
FP10R12W1T4BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

105W

Number of Transistors

7

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Height

12mm

Standards/Approvals

RoHS

Series

FP10R12W1T4B

Length

62.8mm

Width

33.8 mm

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.

Electrical features

Low switching losses

Trench IGBT 3

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

Al2O3 substrate with low thermal resistance

Compact design

Solder contact technology

Rugged mounting due to integrated mounting clamps

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