Infineon, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6674
- Mfr. Part No.:
- IKW75N65EH5XKSA1
- Manufacturer:
- Infineon
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SGD170.43
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SGD185.76
(inc. GST)
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | SGD5.681 | SGD170.43 |
| 90 - 120 | SGD5.511 | SGD165.33 |
| 150 - 270 | SGD5.345 | SGD160.35 |
| 300 - 570 | SGD5.185 | SGD155.55 |
| 600 + | SGD5.03 | SGD150.90 |
*price indicative
- RS Stock No.:
- 215-6674
- Mfr. Part No.:
- IKW75N65EH5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 90A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 395W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.42mm | |
| Width | 16.13mm | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 90A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 395W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Length 41.42mm | ||
Width 16.13mm | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
Infineon High Speed Fifth Generation Series IGBT, 650V Max Collector Emitter Voltage, 90A Max Continuous Collector Current - IKW75N65EH5XKSA1
This IGBT is a power-switching device designed for high-voltage, high-current applications in industrial electronics. It combines rapid switching capability with robust voltage handling to support inverter and motor-drive topologies. The component is supplied in a through-hole TO-247 package and is manufactured to JEDEC standards for consistent electrical characteristics.
Features and Benefits:
• 650V Vceo rating enables high-voltage inverter designs
• 90A continuous collector current supports heavy motor loads
• 1.65V Vcesat minimises conduction losses at high current
• ±30V gate tolerance allows flexible drive voltages
• 395W power dissipation permits sustained thermal loading
• -40°C to 175°C operating range suits elevated-temperature environments
• 90A continuous collector current supports heavy motor loads
• 1.65V Vcesat minimises conduction losses at high current
• ±30V gate tolerance allows flexible drive voltages
• 395W power dissipation permits sustained thermal loading
• -40°C to 175°C operating range suits elevated-temperature environments
Applications
• Suitable for industrial motor-drive power stages
• Ideal for three-phase inverter output transistors
• Used with power supplies requiring high-current switching
• Can be used for traction and heavy-duty drive assemblies
• Suitable for through-hole prototyping and PCB-mounted modules
• Ideal for three-phase inverter output transistors
• Used with power supplies requiring high-current switching
• Can be used for traction and heavy-duty drive assemblies
• Suitable for through-hole prototyping and PCB-mounted modules
What package characteristics affect thermal transfer?
The TO-247 format provides a large metal backing for heatsink attachment and through-hole leads for secure mounting, allowing efficient conduction of dissipated power to external cooling.
How does the gate voltage limit influence driver selection?
With a maximum gate-emitter rating of ±30V, drivers must keep gate amplitude within this range to prevent device stress while providing adequate drive for fast switching transitions.
What considerations apply for parallel operation of multiple devices?
When sharing current across units, ensure matched Vcesat characteristics and individual gate-drive control
adequate thermal management is required to prevent thermal runaway under unequal load sharing.
How does the device perform under high ambient temperatures?
The specified operating range to 175°C indicates suitability for high-temperature environments, but system-level thermal design must maintain junction temperatures within safe limits given the 395W dissipation capacity.