Infineon IHW40N120R5XKSA1, Type N-Channel Resonant Switching, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6641
- Distrelec Article No.:
- 304-31-141
- Mfr. Part No.:
- IHW40N120R5XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD10.70
(exc. GST)
SGD11.66
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 2,120 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD5.35 | SGD10.70 |
| 10 - 98 | SGD5.03 | SGD10.06 |
| 100 - 248 | SGD4.635 | SGD9.27 |
| 250 - 498 | SGD4.305 | SGD8.61 |
| 500 + | SGD4.125 | SGD8.25 |
*price indicative
- RS Stock No.:
- 215-6641
- Distrelec Article No.:
- 304-31-141
- Mfr. Part No.:
- IHW40N120R5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Resonant Switching | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 394W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Operating Temperature | 175°C | |
| Series | IHW40N120R5 | |
| Width | 16.13 mm | |
| Length | 42mm | |
| Height | 5.21mm | |
| Standards/Approvals | Pb-free lead plating, IEC61249-2-21, RoHS, JESD-022 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Resonant Switching | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 394W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Operating Temperature 175°C | ||
Series IHW40N120R5 | ||
Width 16.13 mm | ||
Length 42mm | ||
Height 5.21mm | ||
Standards/Approvals Pb-free lead plating, IEC61249-2-21, RoHS, JESD-022 | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with powerful monolithic body diode with low forward voltage designed for soft commutation.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
- Infineon 80 A 1200 V Through Hole
- Infineon 80 A 1200 V Through Hole
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R022M2HXKSA1
- Infineon IKY40N120CS6XKSA1 80 A 1200 V Through Hole
- ROHM Type N-Channel MOSFET 1200 V N Tray BSM080D12P2C008
- ROHM 80 A 1200 V Through Hole
- ROHM RGS80TSX2GC11 80 A 1200 V Through Hole
- ROHM RGS80TSX2DGC11 80 A 1200 V Through Hole