Infineon IMZC120 Type N-Channel MOSFET, 80 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R022M2HXKSA1
- RS Stock No.:
- 351-925
- Mfr. Part No.:
- IMZC120R022M2HXKSA1
- Manufacturer:
- Infineon
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SGD33.73
(exc. GST)
SGD36.77
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 9 | SGD33.73 |
| 10 - 99 | SGD30.36 |
| 100 + | SGD28.00 |
*price indicative
- RS Stock No.:
- 351-925
- Mfr. Part No.:
- IMZC120R022M2HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO-247-4-U07 | |
| Series | IMZC120 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Power Dissipation Pd | 329W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 5.5V | |
| Maximum Operating Temperature | 200°C | |
| Length | 23.5mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO-247-4-U07 | ||
Series IMZC120 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Power Dissipation Pd 329W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 5.5V | ||
Maximum Operating Temperature 200°C | ||
Length 23.5mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET discrete 1200 V, 22 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Short circuit withstand time 2 μs
Benchmark gate threshold voltage 4.2 V
Robust against parasitic turn on
Very low switching losses
Tighter VGS(th) parameter distribution
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