Infineon IMZC120 Type N-Channel MOSFET, 27 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R053M2HXKSA1
- RS Stock No.:
- 351-931
- Mfr. Part No.:
- IMZC120R053M2HXKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
SGD17.53
(exc. GST)
SGD19.11
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 237 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD17.53 |
| 10 - 99 | SGD15.77 |
| 100 - 499 | SGD14.55 |
| 500 - 999 | SGD13.49 |
| 1000 + | SGD12.10 |
*price indicative
- RS Stock No.:
- 351-931
- Mfr. Part No.:
- IMZC120R053M2HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO-247-4-U07 | |
| Series | IMZC120 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 53mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 182W | |
| Forward Voltage Vf | 5.5V | |
| Maximum Gate Source Voltage Vgs | -10 to 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Length | 23.5mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Width | 16 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO-247-4-U07 | ||
Series IMZC120 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 53mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 182W | ||
Forward Voltage Vf 5.5V | ||
Maximum Gate Source Voltage Vgs -10 to 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Length 23.5mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Width 16 mm | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET discrete with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
Easy paralleling
Related links
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R012M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R022M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R040M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R017M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R078M2HXKSA1
- Infineon IMZC120 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R060M1TXKSA1