Infineon, Type N-Channel IGBT Single Transistor IC, 40 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6612
- Mfr. Part No.:
- AIKW20N60CTXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD233.13
(exc. GST)
SGD254.10
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 210 unit(s) shipping from 16 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | SGD7.771 | SGD233.13 |
| 90 - 120 | SGD7.648 | SGD229.44 |
| 150 - 270 | SGD7.447 | SGD223.41 |
| 300 - 570 | SGD7.056 | SGD211.68 |
| 600 + | SGD6.313 | SGD189.39 |
*price indicative
- RS Stock No.:
- 215-6612
- Mfr. Part No.:
- AIKW20N60CTXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 166W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Length | 42mm | |
| Width | 16.13 mm | |
| Series | TrenchStop | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 166W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Length 42mm | ||
Width 16.13 mm | ||
Series TrenchStop | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon insulated-gate bipolar transistor with fast recovery antiparallel emitter controlled diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference