Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 133-8575
- Mfr. Part No.:
- IKW50N65ES5XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 tube of 240 units)*
SGD1,182.72
(exc. GST)
SGD1,289.28
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 27 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 240 + | SGD4.928 | SGD1,182.72 |
*price indicative
- RS Stock No.:
- 133-8575
- Mfr. Part No.:
- IKW50N65ES5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 274W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 30kHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Energy Rating | 1.78mJ | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 274W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 30kHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Energy Rating 1.78mJ | ||
- COO (Country of Origin):
- CN
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- Infineon IKW50N65ES5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW75N65ES5XKSA1 IGBT 3-Pin TO-247, Through Hole
- onsemi NGTB40N65FL2WG IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW60H65DFB IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW40H65FB IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW40H65DFB IGBT 3-Pin TO-247, Through Hole
- onsemi AFGHL40T65SPD IGBT 3-Pin TO-247, Through Hole
- onsemi AFGHL50T65SQD IGBT 3-Pin TO-247