DiodesZetex ZXMN6A07F Type N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 922-7651
- Mfr. Part No.:
- ZXMN6A07FTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD627.00
(exc. GST)
SGD684.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 126,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | SGD0.209 | SGD627.00 |
| 9000 - 15000 | SGD0.202 | SGD606.00 |
| 18000 + | SGD0.189 | SGD567.00 |
*price indicative
- RS Stock No.:
- 922-7651
- Mfr. Part No.:
- ZXMN6A07FTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ZXMN6A07F | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.95V | |
| Typical Gate Charge Qg @ Vgs | 3.2nC | |
| Maximum Power Dissipation Pd | 806mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.05mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ZXMN6A07F | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.95V | ||
Typical Gate Charge Qg @ Vgs 3.2nC | ||
Maximum Power Dissipation Pd 806mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.05mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex ZXMN6A07F Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 ZXMN6A07FTA
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 IRLML2060TRPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay Si2309CDS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- Vishay Si2309CDS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 IRLML2402TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML2803TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23