Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 919-4735
- Mfr. Part No.:
- IRLML2803TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
SGD378.00
(exc. GST)
SGD411.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
- Plus 6,000 unit(s) shipping from 14 September 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | SGD0.126 | SGD378.00 |
| 6000 - 9000 | SGD0.125 | SGD375.00 |
| 12000 - 27000 | SGD0.122 | SGD366.00 |
| 30000 - 57000 | SGD0.115 | SGD345.00 |
| 60000 + | SGD0.102 | SGD306.00 |
*price indicative
- RS Stock No.:
- 919-4735
- Mfr. Part No.:
- IRLML2803TRPBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 540mW | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 540mW | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Height 1.02mm | ||
Automotive Standard AEC-Q101 | ||
Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF
Features & Benefits
Applications
What is the optimal gate voltage for operation?
How does it perform in high temperatures?
Can it handle pulsed drain currents?
What mounting type is recommended for this device?
What precautions should be taken during installation?
Related links
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