DiodesZetex DMN Type N-Channel MOSFET, 9.4 A, 20 V Enhancement, 6-Pin UDFN DMN2022UFDF-7
- RS Stock No.:
- 921-1063
- Mfr. Part No.:
- DMN2022UFDF-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD23.05
(exc. GST)
SGD25.10
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 25 January 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 450 | SGD0.461 | SGD23.05 |
| 500 - 1200 | SGD0.447 | SGD22.35 |
| 1250 - 4950 | SGD0.434 | SGD21.70 |
| 5000 + | SGD0.421 | SGD21.05 |
*price indicative
- RS Stock No.:
- 921-1063
- Mfr. Part No.:
- DMN2022UFDF-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 2.03W | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.58mm | |
| Width | 2.05 mm | |
| Standards/Approvals | No | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 2.03W | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.58mm | ||
Width 2.05 mm | ||
Standards/Approvals No | ||
Length 2.05mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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