Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB
- RS Stock No.:
- 919-0023
- Mfr. Part No.:
- IRF510PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
SGD52.25
(exc. GST)
SGD56.95
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 500 unit(s) shipping from 22 June 2026
- Plus 3,100 unit(s) shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | SGD1.045 | SGD52.25 |
| 250 - 950 | SGD1.014 | SGD50.70 |
| 1000 - 2450 | SGD0.984 | SGD49.20 |
| 2500 - 12450 | SGD0.954 | SGD47.70 |
| 12500 + | SGD0.785 | SGD39.25 |
*price indicative
- RS Stock No.:
- 919-0023
- Mfr. Part No.:
- IRF510PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220AB | |
| Series | IRF510 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.5V | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220AB | ||
Series IRF510 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.5V | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRF510 Series Power MOSFET, 100V Maximum Drain Source Voltage, 5.6A Maximum Continuous Drain Current - IRF510PBF
This power MOSFET is a through‑hole N‑channel enhancement device designed for switching and amplification tasks in industrial and electronic systems. It operates across a wide temperature range and is intended for applications requiring moderate current handling and high voltage blocking capability in a TO‑220AB package.
Features and Benefits:
• 100V drain‑source rating for high‑voltage switching capability • 5.6A continuous drain current for moderate load handling • 540mΩ Rds(on) to limit conduction losses under load • 43W power dissipation to support thermal headroom in assemblies • 20V gate‑source limit allowing flexible drive voltages • 8.3nC typical gate charge enabling predictable switching profiles
Applications
• Suitable for motor driver stages in automation equipment • Ideal for power switching in laboratory power supplies • Used for load switching in test and measurement rigs • Can be used for analogue amplifier outputs in control systems
What operating temperatures can it tolerate in harsh environments?
It functions from -55°C up to 175°C, allowing use in demanding temperature conditions.
How is the device mounted for mechanical and thermal stability?
It uses a through‑hole mount in a TO‑220AB package, permitting secure PCB fastening and straightforward heatsinking.
What gate drive considerations affect switching performance?
The typical gate charge of 8.3nC at rated Vgs influences driver current requirements and switching speed trade‑offs.
What should be considered when pairing with a heatsink?
With 43W maximum dissipation, heatsink thermal resistance and airflow must be sized to keep junction temperature within limits.
Related links
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF510PBF
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF510SPBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220