Vishay IRF Type N-Channel MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 543-1645
- Mfr. Part No.:
- IRF510SPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD5.58
(exc. GST)
SGD6.08
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 5,580 unit(s) shipping from 06 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.116 | SGD5.58 |
| 25 - 95 | SGD1.094 | SGD5.47 |
| 100 - 245 | SGD1.062 | SGD5.31 |
| 250 - 495 | SGD1.03 | SGD5.15 |
| 500 + | SGD0.998 | SGD4.99 |
*price indicative
- RS Stock No.:
- 543-1645
- Mfr. Part No.:
- IRF510SPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | IRF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series IRF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF510SPBF
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF510PBF
- Vishay IRF Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Vishay IRF Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 IRF644SPBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220