P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK Infineon IRF4905LPBF

RS Stock No.:: 913-3913
Mfr. Part No.:: IRF4905LPBF
Manufacturer:: Infineon

P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK Infineon IRF4905LPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

SGD102.95

(exc. GST)

SGD112.20

(inc. GST)

100 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Tube**
50 - 50	SGD2.059	SGD102.95
100 - 150	SGD1.989	SGD99.45
200 - 450	SGD1.948	SGD97.40
500 - 950	SGD1.91	SGD95.50
1000 +	SGD1.891	SGD94.55

**price indicative

RS Stock No.:: 913-3913
Mfr. Part No.:: IRF4905LPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, -70A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF4905LPBF

This Infineon MOSFET features a P-channel configuration and is capable of handling -70A of continuous drain current with a maximum drain-source voltage of 55V. It is designed for high-performance applications, particularly in electronic circuits that require effective power management and high efficiency. It is suitable for users in the automation and electronics sectors, offering dependable operation in various environments.

Features & Benefits

• Enhanced performance at high temperatures, up to +175°C
• Low RDS(on) for decreased power losses during operation
• Fast switching capabilities to improve efficiency
• Tolerates repetitive avalanche conditions without failure
• Effective gate charge characteristics for better circuit responsiveness

Applications

• Used in power management circuits for energy-efficient devices
• Ideal for brushless DC motor control
• Applicable in automotive electronics for increased reliability
• Suitable for industrial automation systems that require robust components

What type of voltage can be handled during operation?

It can handle a maximum drain-source voltage of 55V, making it suitable for moderate to high voltage applications.

Can this device operate at elevated temperatures?

Yes, it has an operating temperature range of -55°C to +175°C, allowing it to function in extreme conditions.

How does the low RDS(on) benefit circuit design?

The low RDS(on) reduces conduction losses, resulting in enhanced efficiency and lower heat generation in power applications.

Is this component compatible with typical PCB designs?

Yes, it is designed for through-hole mounting, allowing for seamless integration into standard PCB layouts used in various electronic designs.

What are the gate threshold voltage values for this MOSFET?

The maximum gate threshold voltage is 4V, and the minimum is 2V, ensuring your circuit switches correctly at low voltages.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	74 A
Maximum Drain Source Voltage	55 V
Package Type	I2PAK (TO-262)
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	20 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	3.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	180 nC @ 10 V
Height	10.54mm
Minimum Operating Temperature	-55 °C