Infineon OptiMOS 3 N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 911-0853
- Mfr. Part No.:
- IPP200N25N3GXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
SGD319.00
(exc. GST)
SGD347.50
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 50 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD6.38 | SGD319.00 |
| 150 - 200 | SGD6.141 | SGD307.05 |
| 250 + | SGD5.757 | SGD287.85 |
*price indicative
- RS Stock No.:
- 911-0853
- Mfr. Part No.:
- IPP200N25N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 15.95mm | |
| Length | 10.36mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 15.95mm | ||
Length 10.36mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
Infineon OptiMOS 3 Series MOSFET, 250V Drain Source Voltage, 64A Continuous Drain Current - IPP200N25N3GXKSA1
This MOSFET is a power-switching transistor designed for high-voltage, high-current applications where through‑hole mounting is required. It operates across a very wide temperature range and provides a gate‑controlled N‑channel enhancement mode suitable for power conversion and motor‑drive contexts. The device integrates robust gate tolerance and is configured for conventional single‑supply gate‑drive arrangements.
Features and Benefits:
• 250V drain-source withstand voltage enables high‑voltage designs
• 64A continuous drain current supports heavy current loads
• 20 mΩ low RDS(on) reduces conduction losses in power paths
• 64 nC typical gate charge balances switching speed and drive requirements
• 300W maximum power dissipation allows significant load handling
• VGS rating 20V accommodates common gate‑drive voltages
• 64A continuous drain current supports heavy current loads
• 20 mΩ low RDS(on) reduces conduction losses in power paths
• 64 nC typical gate charge balances switching speed and drive requirements
• 300W maximum power dissipation allows significant load handling
• VGS rating 20V accommodates common gate‑drive voltages
Applications
• Suitable for industrial motor‑drive power stages
• Ideal for switch‑mode power supplies and converters
• Used with high‑voltage battery management systems
• Can be used for audio amplifier output‑stage switching
• Suitable for lab prototyping with through‑hole assemblies
• Ideal for switch‑mode power supplies and converters
• Used with high‑voltage battery management systems
• Can be used for audio amplifier output‑stage switching
• Suitable for lab prototyping with through‑hole assemblies
What mounting method does it require for assembly?
It is supplied in a TO‑220 package intended for through‑hole mounting and can be secured to heatsinks using the package tab.
How does temperature capability affect deployment options?
The device is specified to operate from -55 °C up to 175 °C, permitting use in environments with extreme ambient or elevated junction temperatures.
What gate‑drive considerations should be made for switching applications?
With a maximum gate-source voltage of 20V and a typical gate charge of 64 nC, designers should size gate drivers to provide sufficient peak current for desired switching speeds while limiting VGS excursions.
What conduction performance can be expected under heavy load?
Conduction losses are minimised by a maximum drain-source resistance of 20 mΩ, improving thermal management when carrying high currents.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220 IPP200N25N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 IPB200N25N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220