Toshiba TK Type N-Channel MOSFET, 5.4 A, 600 V Enhancement, 3-Pin TO-252 TK5P60W,RVQ(S
- RS Stock No.:
- 896-2644
- Mfr. Part No.:
- TK5P60W,RVQ(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD7.52
(exc. GST)
SGD8.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 330 unit(s) ready to ship from another location
- Plus 2,600 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.752 | SGD7.52 |
| 20 - 40 | SGD0.737 | SGD7.37 |
| 50 - 90 | SGD0.714 | SGD7.14 |
| 100 - 190 | SGD0.692 | SGD6.92 |
| 200 + | SGD0.671 | SGD6.71 |
*price indicative
- RS Stock No.:
- 896-2644
- Mfr. Part No.:
- TK5P60W,RVQ(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | TK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Height | 2.3mm | |
| Width | 7.18 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series TK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Height 2.3mm | ||
Width 7.18 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS4VX(M
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- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
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- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247