N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

RS Stock No.:: 168-7950
Mfr. Part No.:: TK12E60W,S1VX(S
Manufacturer:: Toshiba

N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

This image is representative of the product range

Price Each (In a Tube of 50)

SGD2.729

(exc. GST)

SGD2.975

(inc. GST)

25 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
50 +	SGD2.729	SGD136.45

**price indicative

RS Stock No.:: 168-7950
Mfr. Part No.:: TK12E60W,S1VX(S
Manufacturer:: Toshiba

TK12E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	25 nC @ 10 V
Length	10.16mm
Transistor Material	Si
Width	4.45mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Height	15.1mm

N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

Related links