Toshiba TK Type N-Channel MOSFET, 58 A, 60 V Enhancement, 3-Pin TO-220 TK58A06N1,S4X(S
- RS Stock No.:
- 896-2401
- Mfr. Part No.:
- TK58A06N1,S4X(S
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD5.59
(exc. GST)
SGD6.095
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 60 unit(s) shipping from 29 December 2025
- Plus 170 unit(s) shipping from 05 January 2026
- Plus 200 unit(s) shipping from 13 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | SGD1.118 | SGD5.59 |
| 15 - 70 | SGD1.098 | SGD5.49 |
| 75 + | SGD0.904 | SGD4.52 |
*price indicative
- RS Stock No.:
- 896-2401
- Mfr. Part No.:
- TK58A06N1,S4X(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10mm | |
| Standards/Approvals | No | |
| Width | 4.5 mm | |
| Height | 15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10mm | ||
Standards/Approvals No | ||
Width 4.5 mm | ||
Height 15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
Related links
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