Toshiba TK Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-220 TK100A06N1,S4X(S
- RS Stock No.:
- 827-6097
- Mfr. Part No.:
- TK100A06N1,S4X(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 4 units)*
SGD18.54
(exc. GST)
SGD20.208
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 12 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 36 | SGD4.635 | SGD18.54 |
| 40 - 76 | SGD4.553 | SGD18.21 |
| 80 - 196 | SGD4.443 | SGD17.77 |
| 200 - 996 | SGD4.368 | SGD17.47 |
| 1000 + | SGD4.308 | SGD17.23 |
*price indicative
- RS Stock No.:
- 827-6097
- Mfr. Part No.:
- TK100A06N1,S4X(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15mm | |
| Length | 10mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15mm | ||
Length 10mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 60 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220