Toshiba TK N-Channel MOSFET, 15.8 A, 600 V Enhancement, 3-Pin TO-220 TK16A60W,S4VX(M
- RS Stock No.:
- 891-2901
- Mfr. Part No.:
- TK16A60W,S4VX(M
- Manufacturer:
- Toshiba
Bulk discount available
View bulk pricing optionsSubtotal (5 units, in packs of 5)*
SGD24.37
(exc. GST)
SGD26.56
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 55 unit(s) shipping from 05 October 2026
- Plus 95 unit(s) shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | SGD4.874 | SGD24.37 |
| 15 - 20 | SGD4.738 | SGD23.69 |
| 25 + | SGD4.54 | SGD22.70 |
*price indicative
- RS Stock No.:
- 891-2901
- Mfr. Part No.:
- TK16A60W,S4VX(M
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 15.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15mm | |
| Length | 10mm | |
| Standards/Approvals | No | |
| Width | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 15.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Height 15mm | ||
Length 10mm | ||
Standards/Approvals No | ||
Width 4.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
MOSFET Transistors, Toshiba
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