Infineon Isolated HEXFET 2 N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC IRF7103TRPBF
- RS Stock No.:
- 831-2865
- Distrelec Article No.:
- 304-44-449
- Mfr. Part No.:
- IRF7103TRPBF
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (20 units, in packs of 20)*
SGD17.74
(exc. GST)
SGD19.34
(inc. GST)
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In Stock
- Plus 2,340 unit(s) shipping from 05 October 2026
- Plus 4,560 unit(s) shipping from 12 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD0.887 | SGD17.74 |
| 40 - 80 | SGD0.869 | SGD17.38 |
| 100 - 180 | SGD0.843 | SGD16.86 |
| 200 - 380 | SGD0.818 | SGD16.36 |
| 400 + | SGD0.793 | SGD15.86 |
*price indicative
- RS Stock No.:
- 831-2865
- Distrelec Article No.:
- 304-44-449
- Mfr. Part No.:
- IRF7103TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 50V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Width 4mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF
This MOSFET is designed for efficient performance across various applications. Its Durable construction is particularly beneficial in circuits requiring effective power management, making it suitable for electrical and automation sectors. With a maximum drain-source voltage of 50V, it ensures reliable switching capabilities to meet application demands.
Features & Benefits
• Low Rds(on) of 200mΩ for improved efficiency
• Maximum continuous drain current of 3A enhances power handling
• Operational temperatures up to +150°C for increased reliability
• Wide gate threshold range of 1V to 3V for flexible control
• Dual isolated transistor configuration aids circuit integration
• Surface mount design simplifies PCB assembly and optimises space
Applications
• Used in power supply designs for energy-efficient operation
• Integrated into motor drive for efficient motor control
• Employed in switching power supplies for improved performance
• Suitable for automation systems needing dependable switching components
What is the recommended operating temperature range for this component?
The component operates efficiently within a temperature range of -55°C to +150°C, ensuring reliability in various environments.
How does one determine the suitable gate voltage for optimal performance?
The acceptable gate-source voltage varies from -20V to +20V, providing flexibility in control circuit designs. For best results, operating near 10V is recommended, as indicated by typical gate charge specifications.
What safety precautions should be taken when using this device?
It is important to not exceed the voltage and current ratings during operation to avoid potential failure or damage. Moreover, appropriate heatsinking may be necessary to maintain optimal operating temperatures under heavy loads.
Can it be used in circuits requiring fast switching?
Yes, this MOSFET is designed for fast switching capabilities, making it well-suited for applications requiring high-speed performance, such as PWM control in motor drivers.
Is this MOSFET compatible with standard PCB layouts?
The surface mount design complies with standard PCB layouts, facilitating integration into existing circuits with minimal adjustments for placement.
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