Infineon HEXFET N-Channel MOSFET, 25 A, 55 V Enhancement, 3-Pin TO-252 IRLR3105TRPBF
- RS Stock No.:
- 830-3360
- Distrelec Article No.:
- 304-44-479
- Mfr. Part No.:
- IRLR3105TRPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
SGD15.40
(exc. GST)
SGD16.80
(inc. GST)
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In Stock
- Plus 1,710 unit(s) shipping from 28 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.54 | SGD15.40 |
| 20 - 40 | SGD1.369 | SGD13.69 |
| 50 - 90 | SGD1.249 | SGD12.49 |
| 100 - 190 | SGD1.171 | SGD11.71 |
| 200 + | SGD1.081 | SGD10.81 |
*price indicative
- RS Stock No.:
- 830-3360
- Distrelec Article No.:
- 304-44-479
- Mfr. Part No.:
- IRLR3105TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 25A Maximum Continuous Drain Current, 57W Maximum Power Dissipation - IRLR3105TRPBF
This MOSFET is intended for high-performance applications where electrical power control is critical. It provides efficient switching and effective thermal management, functioning within a wide temperature range, thus making it an advantageous choice for professionals in automation, electronics, and electrical sectors.
Features & Benefits
• Improves efficiency with low Rds(on) for reduced power loss
• Supports a maximum continuous drain current of 25A
• Allows dual gate-source voltage levels for added flexibility
• Maintains thermal stability with a maximum operating temperature of +175°C
• Compact DPAK TO-252 package ensures straightforward surface mounting
• Designed for Rapid switching speeds for enhanced performance
Applications
• Controls motor drives in automation systems
• Utilised in power management circuits for energy efficiency
• Integrated into DC-DC converters for electronic devices
• Suitable for industrial equipment demanding high reliability
• Employed in battery management systems for optimal operation
What is the operating temperature range?
The operating temperature range is -55°C to +175°C, offering versatility across various environments.
How does it handle switching speed?
It is built for fast switching, ensuring high performance in applications necessitating quick on-off cycles.
What type of mounting does it support?
This device is designed for surface mount applications using vapour phase, infrared, or wave soldering techniques.
Can it be used in high-voltage applications?
Yes, it operates with a maximum drain-source voltage of 55V, making it apt for high-voltage circuits.
What considerations should be MADE for power dissipation?
Power dissipation can reach up to 57W, with a derating factor of 0.38W/°C to ensure safe operation in various thermal conditions.
Related links
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
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- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252