DiodesZetex DMN53D0LW Type N-Channel MOSFET, 360 mA, 50 V Enhancement, 3-Pin SC-70 DMN53D0LW-7
- RS Stock No.:
- 828-3206
- Mfr. Part No.:
- DMN53D0LW-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD2.20
(exc. GST)
SGD2.40
(inc. GST)
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Temporarily out of stock
- Shipping from 14 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD0.11 | SGD2.20 |
| 40 - 80 | SGD0.10 | SGD2.00 |
| 100 - 180 | SGD0.091 | SGD1.82 |
| 200 - 380 | SGD0.085 | SGD1.70 |
| 400 + | SGD0.083 | SGD1.66 |
*price indicative
- RS Stock No.:
- 828-3206
- Mfr. Part No.:
- DMN53D0LW-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | DMN53D0LW | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 420mW | |
| Forward Voltage Vf | 0.75V | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series DMN53D0LW | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 420mW | ||
Forward Voltage Vf 0.75V | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Height 1mm | ||
Width 1.35 mm | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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