Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1

RS Stock No.:: 826-9487
Mfr. Part No.:: IPB80P04P407ATMA1
Manufacturer:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1

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Subtotal (1 pack of 25 units)*

SGD77.575

(exc. GST)

SGD84.55

(inc. GST)

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

In Stock

Plus 325 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
25 - 25	SGD3.103	SGD77.58
50 - 100	SGD3.01	SGD75.25
125 - 225	SGD2.919	SGD72.98
250 - 475	SGD2.831	SGD70.78
500 +	SGD2.746	SGD68.65

*price indicative

RS Stock No.:: 826-9487
Mfr. Part No.:: IPB80P04P407ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS P
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	68nC
	Forward Voltage Vf	-1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	88W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	9.25 mm
	Height	4.4mm
	Length	10mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS P
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 68nC
	Forward Voltage Vf -1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 88W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 9.25 mm
	Height 4.4mm
	Length 10mm
	Automotive Standard AEC-Q101

RoHS Status: Not Applicable

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

Infineon OptiMOS™P P-Channel Power MOSFETs

MOSFET Transistors, Infineon

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