DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 7 A, 40 V Enhancement, 8-Pin SOIC DMN4031SSD-13
- RS Stock No.:
- 823-3236
- Mfr. Part No.:
- DMN4031SSD-13
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 20 units)*
SGD14.86
(exc. GST)
SGD16.20
(inc. GST)
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In Stock
- 4,500 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD0.743 | SGD14.86 |
| 40 - 80 | SGD0.702 | SGD14.04 |
| 100 - 180 | SGD0.666 | SGD13.32 |
| 200 - 380 | SGD0.635 | SGD12.70 |
| 400 + | SGD0.608 | SGD12.16 |
*price indicative
- RS Stock No.:
- 823-3236
- Mfr. Part No.:
- DMN4031SSD-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 2.6W | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Forward Voltage Vf | 0.74V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | AEC-Q101, RoHS, UL 94V-0, J-STD-020, MIL-STD-202 | |
| Length | 4.95mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 2.6W | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Forward Voltage Vf 0.74V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals AEC-Q101, RoHS, UL 94V-0, J-STD-020, MIL-STD-202 | ||
Length 4.95mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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