onsemi Isolated PowerTrench 2 Type N-Channel Power MOSFET, 7 A, 30 V Enhancement, 8-Pin SOIC FDS8984
- RS Stock No.:
- 671-0753
- Mfr. Part No.:
- FDS8984
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD5.99
(exc. GST)
SGD6.53
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 2,430 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | SGD1.198 | SGD5.99 |
| 15 - 20 | SGD1.152 | SGD5.76 |
| 25 + | SGD1.082 | SGD5.41 |
*price indicative
- RS Stock No.:
- 671-0753
- Mfr. Part No.:
- FDS8984
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Width 4 mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Isolated PowerTrench 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC FDS4935A
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC