Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin SOIC onsemi FDS8984
- RS Stock No.:
- 671-0753
- Mfr. Part No.:
- FDS8984
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
SGD4.98
(exc. GST)
SGD5.43
(inc. GST)
Temporarily out of stock - back order for despatch 30/05/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
|---|---|---|
| 5 - 10 | SGD0.996 | SGD4.98 |
| 15 - 20 | SGD0.958 | SGD4.79 |
| 25 + | SGD0.90 | SGD4.50 |
**price indicative
- RS Stock No.:
- 671-0753
- Mfr. Part No.:
- FDS8984
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 9.2 nC @ 10 V | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 5mm | |
| Width | 4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 9.2 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 5mm | ||
Width 4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
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