onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

SGD982.50

(exc. GST)

SGD1,070.00

(inc. GST)

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  • Plus 2,500 unit(s) shipping from 29 December 2025
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Units
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Per Reel*
2500 +SGD0.393SGD982.50

*price indicative

RS Stock No.:
166-2631
Mfr. Part No.:
FDS9926A
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

20V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.73V

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

1.5mm

Width

4 mm

Standards/Approvals

No

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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