Vishay SQ Rugged Type P-Channel MOSFET, 17 A, 40 V Enhancement, 8-Pin SOIC SQ4401EY-T1_GE3
- RS Stock No.:
- 819-3917
- Mfr. Part No.:
- SQ4401EY-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD31.92
(exc. GST)
SGD34.79
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- 10 left, ready to ship from another location
- Final 20 unit(s) shipping from 09 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD3.192 | SGD31.92 |
| 100 - 190 | SGD3.167 | SGD31.67 |
| 200 - 590 | SGD3.121 | SGD31.21 |
| 600 - 1790 | SGD2.983 | SGD29.83 |
| 1800 + | SGD2.586 | SGD25.86 |
*price indicative
- RS Stock No.:
- 819-3917
- Mfr. Part No.:
- SQ4401EY-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 7.14W | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.55mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 7.14W | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.55mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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