P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC Vishay SQ4431EY-T1_GE3

RS Stock No.:: 165-6285
Mfr. Part No.:: SQ4431EY-T1_GE3
Manufacturer:: Vishay

P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC Vishay SQ4431EY-T1_GE3

This image is representative of the product range

Subtotal (1 reel of 2500 units)**

SGD1,370.00

(exc. GST)

SGD1,492.50

(inc. GST)

2500 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Reel**
2500 +	SGD0.548	SGD1,370.00

**price indicative

RS Stock No.:: 165-6285
Mfr. Part No.:: SQ4431EY-T1_GE3
Manufacturer:: Vishay

SQ4431EY, Automotive P-Channel 30V (D-S) 175degC MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	6.2 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Series	SQ Rugged
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	52 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	6 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Width	4mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	25 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.55mm

P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC Vishay SQ4431EY-T1_GE3

FREE delivery for orders over SGD250.00 (ex GST)

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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