Vishay SiA462DJ Type N-Channel MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA462DJ-T1-GE3
- RS Stock No.:
- 814-1222
- Mfr. Part No.:
- SIA462DJ-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD23.90
(exc. GST)
SGD26.05
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 2,550 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.478 | SGD23.90 |
| 100 - 200 | SGD0.466 | SGD23.30 |
| 250 - 450 | SGD0.429 | SGD21.45 |
| 500 - 950 | SGD0.38 | SGD19.00 |
| 1000 + | SGD0.364 | SGD18.20 |
*price indicative
- RS Stock No.:
- 814-1222
- Mfr. Part No.:
- SIA462DJ-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-363 | |
| Series | SiA462DJ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 19W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.15mm | |
| Height | 0.8mm | |
| Width | 2.15 mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-363 | ||
Series SiA462DJ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 19W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.15mm | ||
Height 0.8mm | ||
Width 2.15 mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiA462DJ Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3
- Vishay TrenchFET Type P-Channel Power MOSFET 30 V Enhancement, 6-Pin SOT-363
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin SOT-363
- Vishay TrenchFET Type P-Channel MOSFET 150 V Enhancement, 6-Pin SOT-363
- Vishay TrenchFET Type P-Channel MOSFET 150 V Enhancement, 6-Pin SOT-363 SI1411DH-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3
- Vishay TrenchFET Type P-Channel Power MOSFET 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3
