N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

RS Stock No.:: 812-3205
Mfr. Part No.:: SI4178DY-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 20)

SGD0.721

(exc. GST)

SGD0.786

(inc. GST)

1920 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
20 - 20	SGD0.721	SGD14.42
40 - 180	SGD0.635	SGD12.70
200 - 380	SGD0.588	SGD11.76
400 - 780	SGD0.528	SGD10.56
800 +	SGD0.504	SGD10.08

**price indicative

RS Stock No.:: 812-3205
Mfr. Part No.:: SI4178DY-T1-GE3
Manufacturer:: Vishay

Si4178DY, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.4V
Maximum Power Dissipation	5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Length	5mm
Transistor Material	Si
Typical Gate Charge @ Vgs	7.5 nC @ 10 V
Width	4mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.55mm

N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

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