Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

RS Stock No.:: 812-3091
Mfr. Part No.:: SI1922EDH-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 50)**

SGD0.476

(exc. GST)

SGD0.519

(inc. GST)

3000 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Pack**
50 - 50	SGD0.476	SGD23.80
100 - 200	SGD0.453	SGD22.65
250 - 450	SGD0.383	SGD19.15
500 - 950	SGD0.354	SGD17.70
1000 +	SGD0.345	SGD17.25

**price indicative

RS Stock No.:: 812-3091
Mfr. Part No.:: SI1922EDH-T1-GE3
Manufacturer:: Vishay

Si1922EDH, Dual N-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	263 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	1.6 nC @ 8 V
Length	2.2mm
Transistor Material	Si
Width	1.35mm
Height	1mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

FREE delivery for orders over SGD250.00 (ex GST)

Dual N-Channel MOSFET, Vishay Semiconductor

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