STMicroelectronics STripFET N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STW120NF10
- RS Stock No.:
- 810-3700
- Mfr. Part No.:
- STW120NF10
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD20.27
(exc. GST)
SGD22.095
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD4.054 | SGD20.27 |
| 25 - 95 | SGD3.65 | SGD18.25 |
| 100 - 245 | SGD3.456 | SGD17.28 |
| 250 - 495 | SGD3.322 | SGD16.61 |
| 500 + | SGD3.154 | SGD15.77 |
*price indicative
- RS Stock No.:
- 810-3700
- Mfr. Part No.:
- STW120NF10
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | STripFET | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 312 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 172 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 15.75mm | |
| Width | 5.15mm | |
| Transistor Material | Si | |
| Height | 20.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 100 V | ||
Series STripFET | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 312 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 172 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 15.75mm | ||
Width 5.15mm | ||
Transistor Material Si | ||
Height 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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