STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP150N10F7AG
- RS Stock No.:
- 235-5448
- Mfr. Part No.:
- STP150N10F7AG
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 2 units)*
SGD13.10
(exc. GST)
SGD14.28
(inc. GST)
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In Stock
- Plus 488 unit(s) shipping from 18 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 4 | SGD6.55 | SGD13.10 |
| 6 - 8 | SGD6.42 | SGD12.84 |
| 10 - 18 | SGD6.285 | SGD12.57 |
| 20 - 28 | SGD6.155 | SGD12.31 |
| 30 + | SGD6.045 | SGD12.09 |
*price indicative
- RS Stock No.:
- 235-5448
- Mfr. Part No.:
- STP150N10F7AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 127nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 127nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
175°C junction temperature
Standard level VGS(TH)
Designed for automotive application
100% avalanche rated
Applications
Switching applications
Related links
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