onsemi 2N7002T Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SC-89 2N7002T
- RS Stock No.:
- 805-1132
- Mfr. Part No.:
- 2N7002T
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 50 units)*
SGD15.40
(exc. GST)
SGD16.80
(inc. GST)
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Temporarily out of stock
- 1,350 unit(s) shipping from 06 January 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 50 | SGD0.308 | SGD15.40 |
| 100 - 200 | SGD0.301 | SGD15.05 |
| 250 - 450 | SGD0.292 | SGD14.60 |
| 500 - 950 | SGD0.283 | SGD14.15 |
| 1000 + | SGD0.275 | SGD13.75 |
*price indicative
- RS Stock No.:
- 805-1132
- Mfr. Part No.:
- 2N7002T
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-89 | |
| Series | 2N7002T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Width | 0.98 mm | |
| Height | 0.78mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-89 | ||
Series 2N7002T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Width 0.98 mm | ||
Height 0.78mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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