IXYS HiperFET, Polar3 N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3

RS Stock No.:: 802-4366
Mfr. Part No.:: IXFH22N60P3
Manufacturer:: IXYS

IXYS HiperFET, Polar3 N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 2 units)**

SGD17.94

(exc. GST)

SGD19.56

(inc. GST)

Temporarily out of stock - back order for despatch 20/01/2026, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD150.00 (ex GST)

Units	Per unit	Per Pack**
2 - 8	SGD8.97	SGD17.94
10 - 38	SGD7.675	SGD15.35
40 - 98	SGD7.125	SGD14.25
100 - 198	SGD7.11	SGD14.22
200 +	SGD6.21	SGD12.42

**price indicative

RS Stock No.:: 802-4366
Mfr. Part No.:: IXFH22N60P3
Manufacturer:: IXYS

IXFA22N60P3, IXFP22N60P3, IXFQ22N60P3, IXFH22N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	22 A
Maximum Drain Source Voltage	600 V
Package Type	TO-247
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	360 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	500 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Width	5.3mm
Number of Elements per Chip	1
Length	16.26mm
Typical Gate Charge @ Vgs	38 nC @ 10 V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	21.46mm

IXYS HiperFET, Polar3 N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3

FREE delivery for orders over SGD150.00 (ex GST)

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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