IXYS Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-247 IXFH22N60P3
- RS Stock No.:
- 802-4366
- Mfr. Part No.:
- IXFH22N60P3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD17.94
(exc. GST)
SGD19.56
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD8.97 | SGD17.94 |
| 10 - 38 | SGD7.675 | SGD15.35 |
| 40 - 98 | SGD7.125 | SGD14.25 |
| 100 - 198 | SGD7.11 | SGD14.22 |
| 200 + | SGD6.21 | SGD12.42 |
*price indicative
- RS Stock No.:
- 802-4366
- Mfr. Part No.:
- IXFH22N60P3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Height | 21.46mm | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Height 21.46mm | ||
Width 5.3 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IXFP22N60P3
- IXYS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- IXYS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IXFA22N65X2
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R099C7ATMA1
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FM R6049YNXC7G
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220AB R6022YNX3C16