onsemi RFD3055LESM Type N-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 RFD3055LESM9A
- RS Stock No.:
- 802-2159
- Mfr. Part No.:
- RFD3055LESM9A
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
SGD6.10
(exc. GST)
SGD6.60
(inc. GST)
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In Stock
- 20 unit(s) ready to ship from another location
- Plus 3,390 unit(s) shipping from 07 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.61 | SGD6.10 |
| 20 - 40 | SGD0.597 | SGD5.97 |
| 50 - 90 | SGD0.58 | SGD5.80 |
| 100 - 190 | SGD0.564 | SGD5.64 |
| 200 + | SGD0.549 | SGD5.49 |
*price indicative
- RS Stock No.:
- 802-2159
- Mfr. Part No.:
- RFD3055LESM9A
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RFD3055LESM | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 107mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Power Dissipation Pd | 38W | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RFD3055LESM | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 107mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Power Dissipation Pd 38W | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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