ROHM Type N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-252 R6511KND3TL1
- RS Stock No.:
- 235-2695
- Mfr. Part No.:
- R6511KND3TL1
- Manufacturer:
- ROHM
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 235-2695
- Mfr. Part No.:
- R6511KND3TL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 10.4mm | |
| Length | 6.4mm | |
| Width | 2.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Operating Temperature 150°C | ||
Height 10.4mm | ||
Length 6.4mm | ||
Width 2.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM R6xxxKNx series are high-speed switching products, super Junction MOSFET, that place an emphasis on high efficiency. It achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Low on-resistance
Ultra fast switching speed
Parallel use is easy
Pb-free plating
RoHS compliant
Related links
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6511KND3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6511END3TL1
- Infineon CoolMOS C3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SPA11N60C3XKSA1
- Infineon CoolMOS C3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 STB13N60M2
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6504KND3TL1
- ROHM Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 R6504END3TL1