onsemi NTD3055-150 Type N-Channel MOSFET, 9 A, 60 V Enhancement, 3-Pin TO-252 NTD3055-150T4G
- RS Stock No.:
- 802-1011
- Mfr. Part No.:
- NTD3055-150T4G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD23.55
(exc. GST)
SGD25.675
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,425 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.942 | SGD23.55 |
| 50 - 100 | SGD0.895 | SGD22.38 |
| 125 - 475 | SGD0.85 | SGD21.25 |
| 500 - 975 | SGD0.808 | SGD20.20 |
| 1000 + | SGD0.767 | SGD19.18 |
*price indicative
- RS Stock No.:
- 802-1011
- Mfr. Part No.:
- NTD3055-150T4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | NTD3055-150 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Maximum Power Dissipation Pd | 28.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.94V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series NTD3055-150 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Maximum Power Dissipation Pd 28.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.94V | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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