onsemi PowerTrench Type N-Channel MOSFET, 11.4 A, 150 V Enhancement, 3-Pin TO-252 FDD770N15A
- RS Stock No.:
- 809-0938
- Mfr. Part No.:
- FDD770N15A
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD12.12
(exc. GST)
SGD13.21
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Plus 110 unit(s) shipping from 29 December 2025
- Final 1,660 unit(s) shipping from 05 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.212 | SGD12.12 |
| 50 - 90 | SGD1.186 | SGD11.86 |
| 100 - 490 | SGD1.151 | SGD11.51 |
| 500 - 990 | SGD1.116 | SGD11.16 |
| 1000 + | SGD1.082 | SGD10.82 |
*price indicative
- RS Stock No.:
- 809-0938
- Mfr. Part No.:
- FDD770N15A
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.4A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | PowerTrench | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 77mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 56.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.4A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series PowerTrench | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 77mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 56.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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