Toshiba Single 2SK 1 Type N-Channel MOSFET, 5 A, 900 V Enhancement, 3-Pin SC-67 2SK3565,S5Q(J
- RS Stock No.:
- 799-4814
- Mfr. Part No.:
- 2SK3565,S5Q(J
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD12.08
(exc. GST)
SGD13.165
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 15 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD2.416 | SGD12.08 |
| 25 - 120 | SGD2.366 | SGD11.83 |
| 125 - 245 | SGD2.294 | SGD11.47 |
| 250 - 495 | SGD2.238 | SGD11.19 |
| 500 + | SGD2.19 | SGD10.95 |
*price indicative
- RS Stock No.:
- 799-4814
- Mfr. Part No.:
- 2SK3565,S5Q(J
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | 2SK | |
| Package Type | SC-67 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 45W | |
| Forward Voltage Vf | -1.7V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15mm | |
| Length | 10mm | |
| Width | 4.5 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series 2SK | ||
Package Type SC-67 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 45W | ||
Forward Voltage Vf -1.7V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15mm | ||
Length 10mm | ||
Width 4.5 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
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