Toshiba Single 1 N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 SSM3K335R
- RS Stock No.:
- 171-2542
- Mfr. Part No.:
- SSM3K335R
- Manufacturer:
- Toshiba
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
SGD13.95
(exc. GST)
SGD15.20
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.279 | SGD13.95 |
| 100 - 450 | SGD0.265 | SGD13.25 |
| 500 - 950 | SGD0.252 | SGD12.60 |
| 1000 + | SGD0.239 | SGD11.95 |
*price indicative
- RS Stock No.:
- 171-2542
- Mfr. Part No.:
- SSM3K335R
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 2.9mm | |
| Height | 700μm | |
| Width | 1.8mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 2.9mm | ||
Height 700μm | ||
Width 1.8mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- TH
4.5-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 38 mΩ (max) (@VGS = 10 V)
RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
Related links
- Toshiba Single 1 N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SSM3K361R
- Toshiba Single 1 N-Channel MOSFET 100 V EnhancementLF(B
- Toshiba Single 1 N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-723 SSM3K37MFV
- Toshiba Single 1 N-Channel MOSFET 20 V EnhancementL3F(B
- Toshiba Single N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SSM3K333R
- Toshiba Single 2SK 1 N-Channel MOSFET 900 V EnhancementS5Q(J
- Taiwan Semiconductor Single 1 N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 TSM2302CX RFG
- DiodesZetex Single 1 N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-23 ZXMN2A01E6TA