Toshiba TK Type N-Channel MOSFET, 55 A, 80 V Enhancement, 3-Pin TO-220 TK35E08N1
- RS Stock No.:
- 796-5080
- Mfr. Part No.:
- TK35E08N1
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD8.84
(exc. GST)
SGD9.635
(inc. GST)
Add 90 units to get free delivery
In Stock
- 145 unit(s) ready to ship from another location
- Plus 375 unit(s) shipping from 19 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.768 | SGD8.84 |
| 25 - 245 | SGD1.68 | SGD8.40 |
| 250 - 945 | SGD1.594 | SGD7.97 |
| 950 - 1895 | SGD1.514 | SGD7.57 |
| 1900 + | SGD1.442 | SGD7.21 |
*price indicative
- RS Stock No.:
- 796-5080
- Mfr. Part No.:
- TK35E08N1
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 72W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.1mm | |
| Length | 10.16mm | |
| Standards/Approvals | No | |
| Width | 4.45 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 72W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 15.1mm | ||
Length 10.16mm | ||
Standards/Approvals No | ||
Width 4.45 mm | ||
Automotive Standard No | ||
MOSFET N-Channel, TK3x Series, Toshiba
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Related links
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