Toshiba TK Type N-Channel MOSFET, 43 A, 60 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 796-5083
- Mfr. Part No.:
- TK30E06N1
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD7.27
(exc. GST)
SGD7.925
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 15 unit(s) shipping from 29 December 2025
- Plus 2,350 unit(s) shipping from 14 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.454 | SGD7.27 |
| 25 - 95 | SGD1.424 | SGD7.12 |
| 100 - 245 | SGD1.38 | SGD6.90 |
| 250 - 495 | SGD1.338 | SGD6.69 |
| 500 + | SGD1.296 | SGD6.48 |
*price indicative
- RS Stock No.:
- 796-5083
- Mfr. Part No.:
- TK30E06N1
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.45 mm | |
| Length | 10.16mm | |
| Height | 15.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TK | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.45 mm | ||
Length 10.16mm | ||
Height 15.1mm | ||
Automotive Standard No | ||
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