onsemi Type N-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin SOT-223 NTF3055-100T1G
- RS Stock No.:
- 793-1055
- Mfr. Part No.:
- NTF3055-100T1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD11.12
(exc. GST)
SGD12.12
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Limited stock
- 710 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.112 | SGD11.12 |
| 20 - 90 | SGD1.09 | SGD10.90 |
| 100 - 190 | SGD1.058 | SGD10.58 |
| 200 - 390 | SGD1.026 | SGD10.26 |
| 400 + | SGD0.995 | SGD9.95 |
*price indicative
- RS Stock No.:
- 793-1055
- Mfr. Part No.:
- NTF3055-100T1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.65mm | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.65mm | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
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