onsemi Type N-Channel MOSFET, 3 A, 60 V Enhancement, 4-Pin SOT-223 NVF3055L108T1G
- RS Stock No.:
- 805-8717
- Mfr. Part No.:
- NVF3055L108T1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 25 units)*
SGD28.975
(exc. GST)
SGD31.575
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 350 unit(s) ready to ship from another location
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Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 25 | SGD1.159 | SGD28.98 |
| 50 - 100 | SGD1.124 | SGD28.10 |
| 125 - 225 | SGD1.102 | SGD27.55 |
| 250 - 475 | SGD1.08 | SGD27.00 |
| 500 + | SGD0.924 | SGD23.10 |
*price indicative
- RS Stock No.:
- 805-8717
- Mfr. Part No.:
- NVF3055L108T1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Forward Voltage Vf | 0.87V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.65mm | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Forward Voltage Vf 0.87V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.65mm | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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