Vishay SiS892ADN Type N-Channel Power MOSFET, 28 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS892ADN-T1-GE3

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Subtotal (1 pack of 10 units)*

SGD11.35

(exc. GST)

SGD12.37

(inc. GST)

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Units
Per unit
Per Pack*
10 - 90SGD1.135SGD11.35
100 - 290SGD1.107SGD11.07
300 +SGD1.024SGD10.24

*price indicative

Packaging Options:
RS Stock No.:
787-9399
Mfr. Part No.:
SIS892ADN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

100V

Series

SiS892ADN

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.033Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.1nC

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Maximum Operating Temperature

150°C

Length

3.4mm

Standards/Approvals

RoHS

Width

3.4 mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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