N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

RS Stock No.:: 787-9399
Mfr. Part No.:: SIS892ADN-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 10)

SGD1.196

(exc. GST)

SGD1.304

(inc. GST)

2750 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
10 - 90	SGD1.196	SGD11.96
100 - 290	SGD1.166	SGD11.66
300 +	SGD1.079	SGD10.79

**price indicative

RS Stock No.:: 787-9399
Mfr. Part No.:: SIS892ADN-T1-GE3
Manufacturer:: Vishay

SiS892ADN, N-Channel 100V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK 1212
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	47 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	52 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.4mm
Typical Gate Charge @ Vgs	12.8 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	1
Length	3.4mm
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

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