Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

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Subtotal (1 tape of 10 units)*

SGD7.95

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SGD8.67

(inc. GST)

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Per Tape*
10 - 10SGD0.795SGD7.95
20 - 40SGD0.78SGD7.80
50 - 90SGD0.726SGD7.26
100 - 190SGD0.609SGD6.09
200 +SGD0.587SGD5.87

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Packaging Options:
RS Stock No.:
787-9389
Mfr. Part No.:
SIRA14DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.4nC

Maximum Power Dissipation Pd

31.2W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.76V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.26 mm

Length

6.25mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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